2N3055G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
2N3055G
|
|
حجم فایل
|
87.275
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
4
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 2N3055G
-
Transistor Type:
NPN
-
Operating Temperature:
-65°C~+200°C@(Tj)
-
Collector Current (Ic):
15A
-
Power Dissipation (Pd):
115W
-
Transition Frequency (fT):
2.5MHz
-
DC Current Gain (hFE@Ic,Vce):
20@4A,4V
-
Collector Cut-Off Current (Icbo):
700uA
-
Collector-Emitter Breakdown Voltage (Vceo):
60V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
3V@10A,3.3A
-
Package:
TO-204
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tray
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
15A
-
Voltage - Collector Emitter Breakdown (Max):
60V
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 3.3A, 10A
-
Current - Collector Cutoff (Max):
700µA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
-
Power - Max:
115W
-
Frequency - Transition:
2.5MHz
-
Mounting Type:
Through Hole
-
Package / Case:
TO-204AA, TO-3
-
Supplier Device Package:
TO-204 (TO-3)
-
Base Part Number:
2N3055
-
detail:
Bipolar (BJT) Transistor NPN 60V 15A 2.5MHz 115W Through Hole TO-204 (TO-3)
